Published by Dawid ZIĘBA1, Jacek RĄBKOWSKI2, Medcom Company (1), Warsaw University of Technology, Institute of Control and Industrial Electronics (2) ORCID: 1. 0000-0003-3789-6851; 2. 0000-0001-8857-3505 Abstract. The article presents a discussion on the limitations of the flexible Rogowski current probes in the measurements of switching processes in ultra-fast SiC MOSFET power modules. The probes featureContinue reading “Flexible Rogowski Current Probes in Measurements of Ultra-Fast SiC MOSFET Modules – Limitations and Challenges”
Tag Archives: Transistor
Understanding HVDC/FACTS Controller’s Sustainable Development & Comparative Analyses of GTO, GCT, IGBT, MTO, ETO, MCT and MOSFET Operations
Published by Badr Mesned Alshammari1, Tariq Masood2, Muhammad Tajammal Chughtai1, Samer Karim3, University of Hail, Hail, Saudi Arabia (1), Dukhan Operations, Qatar Petroleum (2), Maintenance Department QAFAC (3) Abstract. This article presents a comparative study through analyses regarding a number of power electronics devices. Power Electronic devices have innovative contribution to control the electrical powerContinue reading “Understanding HVDC/FACTS Controller’s Sustainable Development & Comparative Analyses of GTO, GCT, IGBT, MTO, ETO, MCT and MOSFET Operations”
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