Tag Archives: SiC MOSFET

Flexible Rogowski Current Probes in Measurements of Ultra-Fast SiC MOSFET Modules – Limitations and Challenges

Published by Dawid ZIĘBA1, Jacek RĄBKOWSKI2, Medcom Company (1), Warsaw University of Technology, Institute of Control and Industrial Electronics (2) ORCID: 1. 0000-0003-3789-6851; 2. 0000-0001-8857-3505 Abstract. The article presents a discussion on the limitations of the flexible Rogowski current probes in the measurements of switching processes in ultra-fast SiC MOSFET power modules. The probes featureContinue reading “Flexible Rogowski Current Probes in Measurements of Ultra-Fast SiC MOSFET Modules – Limitations and Challenges”